| Identification | More | [Name]
GERMANIUM TELLURIDE | [CAS]
12025-39-7 | [Synonyms]
GERMANIUM (II) TELLURIDE
GERMANIUM TELLURIDE
GERMANIUM(II) TELLURIDE 99.999%
Germanium telluride, 99.999% | [EINECS(EC#)]
234-706-7 | [Molecular Formula]
GeTe | [MDL Number]
MFCD00135541 | [Molecular Weight]
200.24 | [MOL File]
12025-39-7.mol |
| Chemical Properties | Back Directory | [Appearance]
An efficient semiconductor. | [Melting point ]
725 °C(lit.) | [density ]
6.14 g/mL at 25 °C(lit.)
| [solubility ]
insoluble in H2O; soluble in concentrated HNO 3 | [form ]
Powder | [color ]
Black | [Specific Gravity]
6.2 | [Water Solubility ]
Insoluble in water. | [Crystal Structure]
Cubic, Halite Structure - Space Group Fm3m | [Exposure limits]
ACGIH: TWA 0.1 mg/m3
NIOSH: IDLH 25 mg/m3; TWA 0.1 mg/m3 | [CAS DataBase Reference]
12025-39-7(CAS DataBase Reference) | [EPA Substance Registry System]
Germanium telluride (GeTe) (12025-39-7) |
| Safety Data | Back Directory | [Risk Statements ]
R22:Harmful if swallowed. | [Safety Statements ]
S36:Wear suitable protective clothing . | [WGK Germany ]
3
| [TSCA ]
Yes | [HS Code ]
2842901090 |
| Hazard Information | Back Directory | [Chemical Properties]
An efficient semiconductor. | [Uses]
GeTe is a promising material for thermoelectric applications. Nanostructuring; non-stoichiometric defects; doping and alloying with other materials further enhances its thermoelectric performance.
GeTe is also an important semiconductor material prototypical phase change material of high interest for applications in optical and electronic non-volatile memories. | [Application]
Germanium telluride is a promising thermoelectric compound with uses in doping, alloying, and nanostructuring, non-stoichiometric defects. It is also an important semiconductor that can act as a low temperature superconductor when doped. GeTe is also an important semiconductor material prototypical phase change material of high interest for applications in optical and electronic non-volatile memories. | [Preparation]
Germanium telluride is produced by heating Ge (less resistivity) and Te (99.998%) to their melting points in an evacuated quartz tube. single crystals can be obtained using the zone melting method. | [General Description]
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