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ChemicalBook >> CAS DataBase List >>Bis(diethylamino)silane

Bis(diethylamino)silane

CAS No.
27804-64-4
Chemical Name:
Bis(diethylamino)silane
Synonyms
BDEAS;SilanediaMide;amino)dihydrosiL;BIS(DIETHYLAMINO)SILANE;BDEAS: SiH2[N(CH2CH3)2]2;Bis(diethylamino)silane BDEAS;bis(diethylamino)dihydrosilane;Bis(diethylamino) Silane Liquid;N,N,N',N'-Tetraethylsilanediamine;N,N,N',N'-Tetraethylsilanediamine
CBNumber:
CB32653773
Molecular Formula:
C8H22N2Si
Molecular Weight:
174.36
MDL Number:
MFCD19105220
MOL File:
27804-64-4.mol
MSDS File:
SDS
Last updated:2024-04-29 13:09:37

Bis(diethylamino)silane Properties

Boiling point 70°C (30mm)
Density 0.804
form liquid
pka 10.31±0.70(Predicted)
Specific Gravity 0.804
color colorless
Sensitive air sensitive, moisture sensitive
Hydrolytic Sensitivity 8: reacts rapidly with moisture, water, protic solvents

Bis(diethylamino)silane price More Price(5)

Manufacturer Product number Product description CAS number Packaging Price Updated Buy
Strem Chemicals 14-7030 Bis(diethylamino)silane, 97% BDEAS 27804-64-4 5g $131 2024-03-01 Buy
Strem Chemicals 14-7030 Bis(diethylamino)silane, 97% BDEAS 27804-64-4 25g $523 2024-03-01 Buy
Strem Chemicals 98-8810 Bis(diethylamino)silane, 99% (99.999%-Si) BDEAS PURATREM 27804-64-4 5g $190 2024-03-01 Buy
Strem Chemicals 98-8810 Bis(diethylamino)silane, 99% (99.999%-Si) BDEAS PURATREM 27804-64-4 25g $756 2024-03-01 Buy
American Custom Chemicals Corporation ORS0003332 BIS(DIETHYLAMINO)SILANE 95.00% 27804-64-4 5MG $500.75 2021-12-16 Buy
Product number Packaging Price Buy
14-7030 5g $131 Buy
14-7030 25g $523 Buy
98-8810 5g $190 Buy
98-8810 25g $756 Buy
ORS0003332 5MG $500.75 Buy

Bis(diethylamino)silane Chemical Properties,Uses,Production

Uses

Bis(diethylamino) silane (BDEAS) is a highly volatile precursor with a vapor pressure of 30 Torr at 70°C and is liquid at room temperature with a melting point of less than ?10°C and a boiling point of 188°C. It is studied and evaluated as a liquid-phase silicon precursor in the low-temperature atomic layer deposition (ALD) of hafnium silicate films. BDEAS and TDEAH are suitable precursors for the ALD of SiO2, HfO2, or HfSiOx films when used in conjunction with ozone. The composition of various HfSiOx films evaluated from RBS spectra demonstrates excellent tunability of film composition[1].

References

[1] Rajesh Katamreddy, C. Takoudis, B. Feist. “Bis(diethylamino) silane as the silicon precursor in the atomic layer deposition of HfSiOx.” Journal of The Electrochemical Society 155 1 (2008).

Bis(diethylamino)silane Preparation Products And Raw materials

Raw materials

Preparation Products

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Bis(diethylamino)silane Spectrum

27804-64-4(Bis(diethylamino)silane)Related Search:

SilanediaMide, N,N,N',N'-tetraethyl BIS(DIETHYLAMINO)SILANE Bis(diethylaMino)silane, 97% BDEAS SilanediaMine, N,N,N',N'-tetraethyl- BDEAS Bis(diethylamino) Silane Liquid Bis(diethylamino)silane, 99% (99.999%-Si) BDEAS PURATREM BDEAS: SiH2[N(CH2CH3)2]2 bis(diethylamino)dihydrosilane amino)dihydrosiL Bis(diethylamino)silane BDEAS SilanediaMide, N,N,N',N'-tetraethyl ISO 9001：2015 REACH N,N,N',N'-Tetraethylsilanediamine SilanediaMide SilanediaMide, N,N,N',N'-tetraethyl Silanediamine, N,N,N',N'-tetraethyl- N,N,N',N'-Tetraethylsilanediamine 27804-64-4