| Identification | Back Directory | [Name]
4,4',4''-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine | [CAS]
124729-98-2 | [Synonyms]
SUBLI
MTDATA
Mtdada
-N1-(m-tolyl)
4,4',4''-Tris(N-3-me
N1-Phenyl-N4,N4-bis(4-(phenyl(m-tolyl)
4,4',4''-Tris[phenyl(M-tolyl)aMino]triphenylaMine
4,4′,4′′-Tris[(3-methylphenyl)phenylamino]triphenylamine
4,4',4''-Tris[phenyl(m-tolyl)amino]triphenylamine >=99.0%
4,4',4''-Tris[phenyl(3-Methylphenyl)aMino]triphenylaMine, 98%
4,4',4''-TRIS(N-3-METHYLPHENYL-N-PHENYL-AMINO)-TRIPHENYLAMINE
M-MTDATA,4,4',4''-Tris(N-3-Methylphenyl-N-phenylaMino)triphenyla
4,4',4'-TRIS(N-3-METHYLPHENYL-N-PHENYL-AMINO)-TRIPHENYLAMINE M-MTDATA
N1-Phenyl-N4,N4-bis(4-(phenyl(M-tolyl)aMino)phenyl)-N1-(M-tolyl)benzene-1,4-diaMine
N1-(3-methylphenyl)-N4,N4-bis[4-[(3-methylphenyl)phenylamino]phenyl]-N1-phenyl-1,4-benzenediamine | [EINECS(EC#)]
1312995-182-4 | [Molecular Formula]
C57H48N4 | [MDL Number]
MFCD00799401 | [MOL File]
124729-98-2.mol | [Molecular Weight]
789.02 |
| Chemical Properties | Back Directory | [Melting point ]
203-207°C | [density ]
1.190±0.06 g/cm3(Predicted) | [storage temp. ]
2-8°C | [form ]
powder | [pka]
-1.07±0.60(Predicted) | [Absorption]
λmax?312 nm, 342 nm in THF | [Odor]
Yellow/white?powder |
| Hazard Information | Back Directory | [Description]
With its very low solid-state ionisation potential and good-quality amorphous film, 4,4',4''-Tris[phenyl(m-tolyl)amino]triphenylamine, m-MTDATA acts as an effective material for the hole-injection buffer layer (HIL) that facilitates hole injection from the ITO electrode to the hole transporting layer (HTL). This potentially lowers the driving voltage of the OLED devices. | [Uses]
Hole-transporting layer and Hole Injection layer material for High-Performance OLEDs. |
| Questions And Answer | Back Directory | [Applications]
With its very low solid-state ionisation potential and good-quality amorphous film, 4,4',4''-Tris[phenyl(m-tolyl)amino]triphenylamine, m-MTDATA acts as an effective material for the hole-injection buffer layer (HIL) that facilitates hole injection from the ITO electrode to the hole transporting layer (HTL). This potentially lowers the driving voltage of the OLED devices. F4-TCNQ, a strong electron acceptor, is always used together with m-MTDATA as a p-doping material to improve the conductivity of the HTL buffering layer. Typical structure of the device (or part of the device) is ITO/p-doped m-MTDATA/HTL/etc.
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